smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter 2SC4306 features low saturation voltage. fast switching speed. large current capacity. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 5v collector current i c 8a collector current (pulse) i cp 12 a base current i b 1.5 a collector dissipation p c 1w t c =25 p c 15 w jumction temperature t j 150 storage temperature t stg -55to+150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors ic transistors product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 20v, i e =0 1 a emitter cutoff current i ebo v eb =4v,i c =0 1 a v ce =2v,i c = 500ma 100 400 v ce =2v,i c =6a 70 gain bandwidth product f t v ce =2v,i c = 500ma 250 mhz output capacitance c ob v cb = 10v , f = 1.0mhz 60 pf collector-emitter saturation voltage v ce(sat) i c =5a,i b = 250ma 220 400 mv base-emitter saturation voltage v be(sat) i c =5a,i b = 250ma 1 1.3 v collector-base breakdown voltage v (br)cbo i c = 10a , i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 20 v emitter-base breakdown voltage v (br)ebo i e = 10a , i c =0 5 v turn-on time t on 30 300 ns storage time t stg 250 1000 ns fall time t f 15 150 ns dc current gain h fe h fe classification rank r s t hfe 100 200 140 280 200 400 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors 2SC4306 smd type ic smd type transistors smd type ic smd type transistors ic transistors product specification 4008-318-123
|
